Описание

Silicon Dual MOSFET,N-channel: Vdss=30V, Id=5A, Rds(on)=37 mOhm,P-channel: Vdss=30V, Id=4,5A, Rds(on)=27 mOhm, Pd=1,9W (This transistor is an electrostatic sensitive device. Please handle with caution)